Microscopy study of the growth process and structural features of silicon oxide nanoflowers

被引：34

作者：

Zhu, YQ

Hsu, WK

Terrones, M

Grobert, N

Hu, WB

Hare, JP

Kroto, HW

Walton, DRM ^{[1
]}

Terrones, H

机构：

[1] Univ Sussex, Sch Chem Phys & Environm Sci, Brighton BN1 9QJ, E Sussex, England

[2] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico

来源：

CHEMISTRY OF MATERIALS | 1999年 / 11卷 / 10期

关键词：

D O I：

10.1021/cm9910052

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-quality SiOx nanoflowers have been generated by heating mixed SiC/Co powder films in a CO atmosphere. The structural features associated with different stages of the growth were monitored by SEM, TEM, EDX, and XRD analysis. A plausible mechanism for the formation of exquisite flowerlike structures is proposed in which SiC reacts with CO, the Co particles acting as a catalytic template, to yield amorphous SiOx branches. Numerous loops and branches were also observed which may arise either as a result of bifurcation or coalescence. Use of Co2O3 instead of Co as catalyst leads to abnormal flowers exhibiting secondary growth.

引用

页码：2709 / 2715

页数：7

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