Depth scale distortions in shallow implant secondary ion mass spectrometry profiles

被引：22

作者：

Schueler, BW ^{[1
]}

Reich, DF ^{[1
]}

机构：

[1] Phys Elect, Redwood City, CA 94063 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期

关键词：

Depth scale distortions;

D O I：

10.1116/1.591219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Secondary ion mass spectrometry analysis of ultrashallow boron implants is typically performed using sub-keV O-2(+) primary ion beams, either at normal or oblique (with O-2 leak) incidence bombardment. This article investigates the distortion of depth profiles. which may be due to sputter rate changes near the surface or primary ion beam induced mixing/roughening under the primary ion bombardment conditions mentioned above. (C) 2000 American Vacuum Society. [S0734-211X(00)00901-X].

引用

页码：496 / 500

页数：5