Modeling and performance of a 100-element pHEMT grid amplifier

被引：24

作者：

DeLisio, MP

Duncan, SW

Tu, DW

Liu, CM

Moussessian, A

Rosenberg, JJ

Rutledge, DB

机构：

[1] LOCKHEED MARTIN CO,NASHUA,NH 03061

[2] UNIV MARYLAND,LAB PHYS SCI,COLLEGE PK,MD 20783

[3] ROCKWELL INT CORP,ROCKWELL SCI CTR,THOUSAND OAKS,CA 91385

[4] CALTECH,DEPT ELECT ENGN,PASADENA,CA 91125

[5] HARVEY MUDD COLL,DEPT ENGN,CLAREMONT,CA 91711

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1996年 / 44卷 / 12期

关键词：

D O I：

10.1109/22.556440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips, We present a model for gain analysis and compare measurements with theory. The grid includes stabilizing resistors in the gate, Measurements show the grid has a peak gain of 10 dB when tuned for 10 GHz and a gain of 12 dB when tuned for 9 GHz, The maximum 3-dB bandwidth is 15% at 9 GHz, The minimum noise figure is 3 db, The maximum saturated output power is 3.7 W, with a peak power-added efficiency of 12%, These results are a significant improvement over previous grid amplifiers based on heterojunction bipolar transistors (HBT's).

引用

页码：2136 / 2144

页数：9

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