Observation of biexcitonic effect in single ZnCdSe quantum well under very low excitation density

被引：14

作者：

Kuang, G

Gebhardt, W

Griebl, E

Sube, K

Kastner, M

Worz, M

Reisinger, T

机构：

[1] Inst. für Festkörperphysik, Universität Regensburg, 93040, Regensburg

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 20期

关键词：

D O I：

10.1063/1.119002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Under an excitation density of 0.4 W/cm(2), a strong biexcitonic peak was observed in the photoluminescence (PL) spectrum of a single quantum well which was grown in submonolayer deposition mode. Its intensity was found to increase superlinearly with excitation density. The shape of the biexcitonic peak was found to be similar to that of biexcitons in CuCl and CdS crystal and a binding energy of 9.8 meV was obtained. When the temperature increased from 10 to 31 K, the biexcitonic peak decreased considerably whereas the excitonic peak increased slightly. (C) 1997 American Institute of Physics.

引用

页码：2717 / 2719

页数：3

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