The low temperature thermoelectric properties of CuxTiSe2-ySy

被引：17

作者：

Hor, Y. S. ^{[1
]}

Cava, R. J. ^{[1
]}

机构：

[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

来源：

MATERIALS RESEARCH BULLETIN | 2009年 / 44卷 / 06期

关键词：

Chalcogenides; Electronic materials; Layered compounds; Charge-density waves; Thermal conductivity; TIS2;

D O I：

10.1016/j.materresbull.2008.12.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low temperature thermoelectric properties of TiSe2, co-doped with Cu and S, are reported. Partial S substitution for Se changes the magnitude of the indirect bandgap, while the Cu-doping independently controls the n-type carrier concentration. The Seebeck coefficients are negative, in the range of -50 to -200 mu V K-1, and the resistivities are 0.1-10 m Omega cm. The thermal conductivity for the sample with the largest thermoelectric power factor was found to be relatively low, 3-4 W m(-1) K-1, and decreases with decreasing temperature. The thermoelectric efficiencies for the best materials found in this system, typified by Cu0.02TiSe1.7S0.3, were largest at 0.07 at 300 K and decreased to 0.01 at 75 K. (C) 2008 Elsevier Ltd. All rights reserved.

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页码：1375 / 1378

页数：4

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