Influence of phase fluctuation in external environment on Coulomb blockade in an array system of single tunnel junctions/Ni nanowires

被引:4
作者
Haruyama, J [1 ]
Hijioka, K [1 ]
Tako, M [1 ]
Sato, Y [1 ]
机构
[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 1578572, Japan
关键词
D O I
10.1063/1.126140
中图分类号
O59 [应用物理学];
学科分类号
摘要
Correlation of Coulomb blockade (CB) with phase fluctuation caused by mutual Coulomb interaction is reported in an array system of single tunnel junctions directly connected to disordered Ni nanowires. At the voltages lower than CB voltage, temperature dependence of the normalized resistance is classified to the following two regimes by a phase transition temperature (T-c), (1) mutual Coulomb interaction regime (T > T-c) and (2) CB regime (T < T-c). It is found that this T-c is very sensitive to a diffusion coefficient (D) of the mutual Coulomb interaction, resulting in a linear T-c vs D-1/2 relation. This relation is interpreted as a result of the competition between the charging energy of the CB and the phase fluctuation energy caused by the multiple Coulomb scattering in the Ni nanowire. It is also reconfirmed by the wire diameter dependence of T-c. (C) 2000 American Institute of Physics. [S0003-6951(00)00213-8].
引用
收藏
页码:1698 / 1700
页数:3
相关论文
共 20 条
  • [1] AKERA H, 1997, INT NAT S NAN EL NPE, P83
  • [2] Altshuler B.L., 1985, ELECT ELECT INTERACT
  • [3] ZERO BIAS ANOMALY IN TUNNEL RESISTANCE AND ELECTRON-ELECTRON INTERACTION
    ALTSHULER, BL
    ARONOV, AG
    [J]. SOLID STATE COMMUNICATIONS, 1979, 30 (03) : 115 - 117
  • [4] EFFECTS OF ELECTRON-ELECTRON COLLISIONS WITH SMALL ENERGY TRANSFERS ON QUANTUM LOCALIZATION
    ALTSHULER, BL
    ARONOV, AG
    KHMELNITSKY, DE
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (36): : 7367 - 7386
  • [5] Averin D., 1991, Modern Problems in Condensed Matter Sciences, V30, P173
  • [6] CHARGE FLUCTUATIONS IN SMALL-CAPACITANCE JUNCTIONS
    CLELAND, AN
    SCHMIDT, JM
    CLARKE, J
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (13) : 1565 - 1568
  • [7] Nonlithographic nanowire-array tunnel device: Fabrication, zero-bias anomalies, and Coulomb blockade
    Davydov, DN
    Haruyama, J
    Routkevitch, D
    Statt, BW
    Ellis, D
    Moskovits, M
    Xu, JM
    [J]. PHYSICAL REVIEW B, 1998, 57 (21): : 13550 - 13553
  • [8] EFFECT OF HIGH-FREQUENCY ELECTRODYNAMIC ENVIRONMENT ON THE SINGLE-ELECTRON TUNNELING IN ULTRASMALL JUNCTIONS
    DELSING, P
    LIKHAREV, KK
    KUZMIN, LS
    CLAESON, T
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (11) : 1180 - 1183
  • [9] EFFECT OF THE ELECTROMAGNETIC ENVIRONMENT ON THE COULOMB BLOCKADE IN ULTRASMALL TUNNEL-JUNCTIONS
    DEVORET, MH
    ESTEVE, D
    GRABERT, H
    INGOLD, GL
    POTHIER, H
    URBINA, C
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (15) : 1824 - 1827
  • [10] GRABERT H, 1991, NATOASI B, V294