On the structure and electron photodetachment spectra of Ga3P- and Ga3As-

被引:18
作者
Archibong, EF
St-Amant, A
Goh, SK
Marynick, DS
机构
[1] Univ Ottawa, Dept Chem, Ottawa, ON K1N 6N5, Canada
[2] Univ Texas, Dept Biochem & Chem, Arlington, TX 76019 USA
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1016/S0009-2614(02)00902-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The main features of the Ga3P- photodetachment spectrum reported by Taylor, Asmis, Xu and Neumark [Chem. Phys. Lett. 297 (1998) 133] have been assigned. Ga3P- has a B-2(2) (C-2v) ground state. A near degeneracy is found between the (1)A(1) (C-2v) and the (1)A(1) (C-3v) states of Ga3P. The observed peaks are assigned to Ga3P states with C-2v structure. In line with Ga3P, the (1)A(1)(C-2v) and (1)A(1)(C-3v) states of Ga3As are nearly degenerate. Electron detachment processes are presented and discussed for the Ga3As-/Ga-3 As system on the basis of a C-2v ground state geometry for the anion and the neutral molecule. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码:411 / 420
页数:10
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