Resolution enhancement of 157 nm lithography by liquid immersion

被引:28
作者
Switkes, M [1 ]
Rothschild, M [1 ]
机构
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
来源
OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2 | 2002年 / 4691卷
关键词
157; nm; optical lithography; immersion lithography; interference lithography; perfluoropolyether;
D O I
10.1117/12.474568
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present the results of a preliminary feasibility study of liquid immersion lithography at 157 nm. A key enabler has been the identification of a class of commercially available liquids, perfluoropolyethers, with low 157 nm absorbance alpha(157)similar to10 cm(-1) base10. With 157 nm index of refraction around 1.36, these liquids could enable lithography at NAsimilar to1.25 and thus resolution of 50 nm for k(1)=0.4. We have also performed preliminary studies on the optical, chemical, and physical suitability of these liquids for use in high throughput lithography. We also note that at longer wavelengths, there is a wider selection of transparent immersion liquids. At 193 nm, the most transparent liquid measured, deionized water, has alpha(193) = 0.036 cm(-1) base 10. Water immersion lithography at 193 nm would enable resolution of 60 nm with k(1)=0.4.
引用
收藏
页码:459 / 465
页数:7
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