Electron dynamics in intentionally disordered semiconductor superlattices

被引:16
作者
Diez, E
Sanchez, A
DominguezAdame, F
Berman, GP
机构
[1] UNIV COMPLUTENSE MADRID,FAC FIS,DEPT FIS MAT,E-28040 MADRID,SPAIN
[2] LOS ALAMOS NATL LAB,DIV THEORET,LOS ALAMOS,NM 87545
[3] LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 20期
关键词
D O I
10.1103/PhysRevB.54.14550
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Dominguez-Adame et al. [Phys. Rev. B 51, 14 359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controlling the output band using a de-electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work.
引用
收藏
页码:14550 / 14559
页数:10
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