Electronic sputtering and desorption effects in TOF-SIMS studies using slow highly charged ions like Au69+

被引：9

作者：

Schenkel, T ^{[1
]}

Briere, MA ^{[1
]}

SchmidtBocking, H ^{[1
]}

Bethge, K ^{[1
]}

Schneider, D ^{[1
]}

机构：

[1] UNIV FRANKFURT, INST KERNPHYS, D-60486 FRANKFURT, GERMANY

来源：

MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES | 1997年 / 248-2卷

关键词：

Time of Flight SIMS; graphite; SiO2; highly charged ions; electronic sputtering;

D O I：

10.4028/www.scientific.net/MSF.248-249.413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Secondary ion yields from highly oriented pyrolytic graphite (HOPG) and SiO2 (native oxide on float zone silicon) targets at impact of slow (v approximate to 0.3 v(Bohr)) highly charged ions like Th70+ have been measured by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). A direct comparison of collisional and electronic effects in secondary ion production using a beam of charge state equilibrated 300 keV Xe1+ shows a secondary ion yield increase by a factor of greater than or equal to 100.

引用

页码：413 / 417

页数：5

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