Molecular orientation dependence of hole-injection barrier in pentacene thin film on the Au surface in organic thin film transistor

被引：67

作者：

Ihm, Kyuwook

Kim, Bongsoo

Kang, Tai-Hee

Kim, Ki-Jeong

Joo, Min Ho

Kim, Tae Hyeong

Yoon, Sang Soo

Chung, Sukmin ^{[1
]}

机构：

[1] POSTECH, Dept Phys, Pohang 790784, South Korea

[2] Pohang Accelerator Lab, Pohang 790784, South Korea

[3] Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South Korea

[4] LG Elect Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea

[5] POSTECH, Dept Phys, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 03期

关键词：

D O I：

10.1063/1.2227712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effects of a buffer layer insertion on the performance of the pentacene based thin film transistor with a bottom contact structure. When the pentacene molecules have a standing up coordination on the Au surface that is modified by the benzenethiol or methanethiol, the transition region in the pentacene thin film is removed along the boundary between the Au and silicon oxide region, and the hole-injection barrier decreases by 0.4 eV. Pentacene on various surfaces showed that the highly occupied molecular level is 0.2-0.4 eV lower in the standing up coordination than in the lying down coordination. (c) 2006 American Institute of Physics.

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页数：3

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