Photoluminescence from C+-implanted SiNxOy films grown on crystalline silicon

被引：11

作者：

Liao, LS

Xiong, ZH

Zhou, X

Liu, XB

Hou, XY

机构：

[1] FUDAN UNIV,TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

[2] CHANGSHA ELECT POWER UNIV,DEPT PHYS,CHANGSHA 410077,HUNAN,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 15期

关键词：

D O I：

10.1063/1.119378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon ions at an energy of 35 keV with a dose of 5 X 10(16) cm(-2) were implanted into SiNxOy films grown on crystalline silicon by plasma enhanced chemical vapor deposition. Intense photoluminescence (PL) peaked at about 550 nm is observed in the implanted films under an excitation of 441.6 nm laser line. The PL intensity varies with annealing temperature, and reaches a maximum at the annealing temperature of 600 degrees C. The luminescence may originate from the complex of Si, N, O, and C in the films. (C) 1997 American Institute of Physics.

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页码：2193 / 2195

页数：3

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