Processing, properties and arc jet oxidation of hafnium diboride/silicon carbide ultra high temperature ceramics

被引:253
作者
Gasch, M
Ellerby, D
Irby, E
Beckman, S
Gusman, M
Johnson, S
机构
[1] ELORET Corp, Sunnyvale, CA 94087 USA
[2] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA
关键词
D O I
10.1023/B:JMSC.0000041689.90456.af
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The processing and properties of HfB2-20 vol%SiC ultra high temperature ceramics were examined. Dense billets were fabricated by hot-pressing raw powders in a graphite element furnace for 1 h at 2200degreesC. Specimens were then tested for hardness, mechanical strength, thermal properties and oxidation resistance in a simulated re-entry environment. Thermal conductivity of the current materials was found to be less than previous work had determined while the strength was greater. Oxidation testing of two flat-face models was conducted, at two conditions, for two 10-min durations each. It was concluded that passive oxidation of SiC plays a role in determining the steady-state surface temperatures below 1700degreesC. Above 1700degreesC, temperatures are controlled by the properties of a thick HfO2 layer and active oxidation of the SiC phase. (C) 2004 Kluwer Academic Publishers.
引用
收藏
页码:5925 / 5937
页数:13
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