Role of electron-phonon coupling in thermal conductance of metal-nonmetal interfaces

被引:418
作者
Majumdar, A [1 ]
Reddy, P
机构
[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Appl Sci & Technol Program, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.1758301
中图分类号
O59 [应用物理学];
学科分类号
摘要
We theoretically show that the thermal conductance associated with electron-phonon coupling in a metal near a metal-nonmetal interface can be estimated as h(ep)=rootGk(p), where G is the volumetric electron-phonon coupling constant and k(p) is the phonon or lattice thermal conductivity of the metal. The expression suggests h(ep)approximate to1/rootT at temperatures comparable to the Debye temperature of the metal. The predicted values of h(ep) fall within the range of conductance values experimentally observed (0.3-1 GW/m(2) K), suggesting that it cannot be ignored, and could even play a dominant role at high temperatures. Predictions of the total thermal conductance, that include both electron-phonon and phonon-phonon interfacial conductances, show reasonable agreement in its temperature dependence with experimental data for TiN/MgO interfaces. (C) 2004 American Institute of Physics.
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页码:4768 / 4770
页数:3
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