YMnO3 thin films prepared from solutions for non volatile memory devices

We demonstrated for the first time that hexagonal YMnO3 films were fabricated from solutions which were effective for lowering the formation temperature. Two different processes, a thermal decomposition method and a reflux method, were studied. In the thermal decomposition method, the solution containing Y(OAc)3 . 4H(2)O and Mn(OAc)(2) . 4H(2)O dissolved in ethanol containing diethanolamine was used for coating. Firing temperatures over 900 degrees C were needed to obtain the YMnO3 single phase film using the thermal decomposition process. In the reflux method, the precursor solution prepared from 2-ethoxyethanol as a solvent was refluxed at 125 degrees C and the solution obtained was used for coating. The reflux process drastically lowered the firing temperatures to 700 degrees C, and this process also improved the microstructure. Effects of reflux on the crystallization process and dielectric properties have been demonstrated.