Development of thin-film Cu(In,Ga)Se2 and CdTe solar cells

被引：340

作者：

Romeo, A

Terheggen, A

Abou-Ras, D

Bätzner, DL

Haug, FJ

Kälin, M

Rudmann, D

Tiwari, AN

机构：

[1] Swiss Fed Inst Technol, ETH, Solid State Phys Lab, Thin Film Phys Grp, CH-8005 Zurich, Switzerland

[2] Loughborough Univ Technol, Dept Elect & Elect Engn, Ctr Renewable Energy Syst & Technol, Loughborough LE11 3TU, Leics, England

[3] ETH, Inst Appl Phys, CH-8093 Zurich, Switzerland

来源：

PROGRESS IN PHOTOVOLTAICS | 2004年 / 12卷 / 2-3期

关键词：

solar cells; CdTe; Cu(In; Ga)Se-2; thin-films; photovoltaics; solar energy;

D O I：

10.1002/pip.527

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Cu(In,Ga)Se-2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p-type absorber layers of optimum optoelectronic properties and n-type wide-bandgap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(InGa)Se-2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright (C) 2004 John Wiley Sons, Ltd.

引用

页码：93 / 111

页数：19

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