Thermal analyses by means of scanning probe microscopy

被引:5
作者
Balk, LJ
Cramer, RM
Fiege, GBM
机构
来源
PROCEEDINGS OF THE 1997 6TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 1997年
关键词
D O I
10.1109/IPFA.1997.638063
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The continuous decrease of the lateral dimensions of state-of-the-art integrated devices has led to a steady increase of their power densities. As a result, local heating effects are known to cause malfunctions or the destruction of these devices. In order to overcome these problems related with localized heat dissipation, new techniques for thermal analyses with high spatial resolutions have to be developed. This includes temperature as well as thermal conductivity or diffusivity measurements. In this work we discuss the recent progress of scanning probe microscopy based thermal analysis techniques and present concepts for further improvements.
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页码:1 / 6
页数:6
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