Annealing effect on magnetic and electrical properties of epitaxial La0.8Mn3-delta thin films grown by chemical vapor deposition

被引：50

作者：

Pignard, S

Vincent, H

Senateur, JP

Pierre, J

Abrutis, A

机构：

[1] CNRS,LAB LOUIS NEEL,F-38042 GRENOBLE 9,FRANCE

[2] VILNIUS UNIV,DEPT GEN & INORGAN CHEM,LT-2734 VILNIUS,LITHUANIA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 09期

关键词：

D O I：

10.1063/1.366174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new liquid source metalorganic chemical vapor deposition process has been developed in order to control precisely the amount of precursors vapors that is produced. Films of self-doped La0.8MnO3-delta have been deposited on LaAlO3 (012) substrates. X-ray diffraction measurements reveal an epitaxial growth. The as-deposited films exhibit both a ferromagnetic (Tc=200 K) and a metal-insulator (T rho=130 K) transition. Postannealing experiments have been carried out and the results indicate the resistivity is considerably reduced, the temperature of transitions is raised to 320 K, and a magnetoresistance Delta rho/rho(0)=20% per tesla is obtained at 300 K in the 0-2 T range. (C) 1997 American Institute of Physics. [S0021-8979(97)06321-4].

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页码：4445 / 4448

页数：4

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