High-mobility C60 field-effect molecular-wetting controlled transistors fabricated on substrates

被引:192
作者
Itaka, Kenji
Yamashiro, Mitsugu
Yamaguchi, Jun
Haemori, Masamitsu
Yaginuma, Seiichiro
Matsumoto, Yuji
Kondo, Michio
Koinuma, Hideomi
机构
[1] Univ Tokyo, Grad Sch Frontier Sci, Kashiwa, Chiba 2778568, Japan
[2] CREST, Japan Sci & Technol Agcy, Kawaguchi, Saitama, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] AIST, Tsukuba, Ibaraki 3058562, Japan
[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
关键词
D O I
10.1002/adma.200502752
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An atomically flat pentacene monomolecular layer remarkably improved the crystallinity of C-60 films, thus enhancing the field-effect mobilities in C-60 transistors (FETs) (see figure). They showed a four to five times better performance over devices with C-60 films grown without a pentacene buffer. Molecular-wetting-controlled substrates can thus offer a general solution to the fabrication of high-performance crystalline organic devices.
引用
收藏
页码:1713 / +
页数:5
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