Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers

We report an interdigitated p-i-n photodetector fabricated on a 1-mum-thick Ge epitaxial layer grown on a Si substrate using a 10-mum-thick graded SiGe buffer layer. A growth rate of 45 Angstrom/ssimilar to60 Angstrom/s was achieved using low-energy plasma enhanced chemical vapor deposition. The Ge epitaxial layer had a threading dislocation density of 10(5) cm(-2) and a rms surface roughness of 3.28 nm. The 3-dB bandwidth and the external quantum efficiency were measured on a photodetector having 1-mum finger width and 2-mum spacing with a 25 x 28 mum(2) active area. At a wavelength of 1.3 mum, the bandwidth was 2.2, 3.5, and 3.8 GHz at bias voltages of -1, -3, and -5 V, respectively. The dark current was 3.2 and 5.0 muA at -3 and -5 V, respectively. This photodetector exhibited an external quantum efficiency of 49% at a wavelength of 1.3 mum.