A reduced complexity process for organic thin film transistors

被引：76

作者：

Klauk, H ^{[1
]}

Gundlach, DJ

Bonse, M

Kuo, CC

Jackson, TN

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA

[2] Penn State Univ, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simplified device structure for depletion-mode organic thin film transistors is described in which the gate electrode and the source/drain contacts are prepared in the same process step, thus reducing the number of material depositions and photolithography steps. Based on the simplified device structure and using the small-molecule aromatic hydrocarbon pentacene as the active material, organic thin film transistors were fabricated on glass substrates with carrier mobility of 0.6 cm(2)/V s, on/off current ratio of 10(5), and subthreshold slope of 0.5 V/decade. (C) 2000 American Institute of Physics. [S0003-6951(00)00913-X].

引用

页码：1692 / 1694

页数：3

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