Microscopic origin of light emission from AlyGa1-yN/GaN superlattices: Band profile and active site

被引：10

作者：

Cai, Duanjun ^{[1
]}

Kang, Junyong ^{[2
,3
]}

Guo, Guang-Yu ^{[1
,4
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[3] Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China

[4] Natl Chengchi Univ, Grad Inst Appl Phys, Taipei 116, Taiwan

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 04期

关键词：

EMITTING-DIODES; FIELDS; FILMS;

D O I：

10.1103/PhysRevB.80.045311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present first-principles calculations of AlGaN/GaN superlattice, clarifying the microscopic origin of the light emission and revealing the effect of local polarization within the quantum well. Profile of energy band and distributions of electrons and holes demonstrate the existence of a main active site in the well responsible for the main band-edge light emission. This site appears at the position where the local polarization becomes zero. With charge injection, the calculated optical spectra show that the broadening of the band gap at the active site leads to the blueshift of emission wavelength.

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页数：4

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