Efficient GaAs light-emitting diodes by photon recycling

被引：37

作者：

Dupont, E ^{[1
]}

Liu, HC

Buchanan, M

Chiu, S

Gao, M

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Def Res Estab, Dept Natl Def, Ottawa, ON K1A 0Z4, Canada

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.125718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterostructure AlGaAs/GaAs light-emitting diodes (LEDs) with a thick active region have shown high external efficiencies, thanks to reabsorption in the active region. For high injection currents and low temperature, we report a 22% efficiency which corresponds to a 98% efficiency internally. We discuss the application of such LED when integrated with a quantum-well infrared photodetector for pixelless thermal imaging systems. (C) 2000 American Institute of Physics. [S0003-6951(00)00801-9].

引用

页码：4 / 6

页数：3

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