On the construction of an Fe3O4-based all-oxide spin valve

被引:123
作者
van der Zaag, PJ
Bloemen, PJH
Gaines, JM
Wolf, RM
van der Heijden, PAA
van de Veerdonk, RJM
de Jonge, WJM
机构
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[2] Eindhoven Univ Technol, Dept Phys, NL-5600 MB Eindhoven, Netherlands
[3] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands
关键词
spin-valve; tunnel magnetoresistance; oxides;
D O I
10.1016/S0304-8853(99)00751-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The progress made in constructing an all-oxide spin valve based on the intrinsic, fully spin-polarized electron transport in Fe3O4 is discussed. Two possible oxidic spacer layers, MgO and Mn3O4, have been investigated. Interlayer coupling studies indicate that MgO is the more suitable spacer layer of the two. Thus far a limited magnetoresistive effect less than or equal to 0.4% is found in the all oxide, Fe3O4-based, spin-valves which we have made. Possible causes for this low magnetoresistive effect are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:301 / 308
页数:8
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