Microcrystalline silicon-germanium solar cells for multi-junction structures

被引：84

作者：

Isomura, M ^{[1
]}

Nakahata, K ^{[1
]}

Shima, M ^{[1
]}

Taira, S ^{[1
]}

Wakisaka, K ^{[1
]}

Tanaka, M ^{[1
]}

Kiyama, S ^{[1
]}

机构：

[1] Sanyo Elect Co Ltd, New Mat Res Ctr, Osaka 5738534, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

solar cell; silicon-germanium; stacked structure; plasma CVD; thin film; absorption coefficient; Raman spectroscopy;

D O I：

10.1016/S0927-0248(02)00069-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Microcrystalline silicon-germanium (muc-SiGe) solar cells were investigated for a unit cell of multi-junction structures. Despite having a thinner muc-SiGe layer of 0.5 mum, a conversion efficiency of 5.6% (the highest value ever reported for muc-SiGe solar cells) was achieved by using a muc-SiGe film with 20% Ge concentration. A short-circuit current (I-sc) of 28 mA/cm(2) was obtained in the case of 27% Ge concentration. This is higher than the I-sc of the best muc-Si solar cells with 2 mum thickness. The collection efficiency spectrum shows more than 20% at 1000 nm, and sensitivity is observed in wavelengths up to 1200 nm. The results suggest that a reduction in the thickness of microcrystalline solar cells may achieve higher productivity, and the utilization of longer wavelength light allows us to obtain higher efficiency. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：519 / 524

页数：6

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