Anomalous Hall effect in ferromagnetic semiconductors with hopping transport

被引:34
作者
Allen, W [1 ]
Gwinn, EG
Kreutz, TC
Gossard, AC
机构
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93016 USA
[3] Univ Calif Santa Barbara, ECE, Santa Barbara, CA 93016 USA
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 12期
关键词
D O I
10.1103/PhysRevB.70.125320
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use high-field magnetotransport to examine the relation between the Hall effects and the longitudinal resistance, R-xx, in digitally doped (Ga,Mn)As structures with hopping transport. The ordinary and anomalous Hall resistances, R-OH and R-AH, display sublinear dependences on R-xx, a behavior inconsistent with theories used to interpret data from metallic semiconductor ferromagnets. None of the resistances are simply activated. While R-OH is consistently holelike, R-AH can have either sign. These results agree qualitatively with aspects of a recently developed model for the Hall effects in the hopping regime.
引用
收藏
页码:125320 / 1
页数:5
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