The effect of silicon addition on thermoelectric properties of a B4C ceramic

被引：23

作者：

Cai, KF

Nan, CW

Min, XM

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synthesis & Proc, Wuhan 430070, Peoples R China

[2] Univ Witwatersrand, Dept Phys, ZA-2050 Wits, South Africa

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 67卷 / 03期

基金：

中国国家自然科学基金;

关键词：

boron carbide; ceramics; hot pressing; thermoelectric properties;

D O I：

10.1016/S0921-5107(99)00220-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A B4C ceramic doped with 0.2 at% Si is prepared via hot pressing. The composition and microstructure of the ceramic are characterized by means of X-ray diffraction (XRD) and electron probe microanalysis (EPMA). The electrical conductivity and Seebeck coefficient of the ceramic samples are measured from room temperature up to 1500 K. The electrical conductivity increases with temperature; the Seebeck coefficient also increases with temperature and rises to a value of about 320 mu V K-1 at 1500 K. The value of the figure of merit of 0.2 at% Si-doped B4C is higher than that of undoped B4C and rises to about 1 x 10(-4) K-1 at 1500 K. The reason for enhancement in the figure of merit of Si-doped B4C is discussed. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

引用

页码：102 / 107

页数：6

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