Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures

被引：18

作者：

Akiba, N ^{[1
]}

Chiba, D ^{[1
]}

Nakata, K ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, Y ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone. (C) 2000 American Institute of Physics. [S0021-8979(00)81508-X].

引用

页码：6436 / 6438

页数：3

共 12 条

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