A WSixN diffusion barrier formed with electron cyclotron resonance nitrogen plasma

被引：8

作者：

Hirata, A ^{[1
]}

Hosoya, T ^{[1
]}

Machida, K ^{[1
]}

Takaoka, H ^{[1
]}

Akiya, H ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 11期

关键词：

D O I：

10.1149/1.1837283

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effectiveness of using a tungsten silicon nitride (WSixN) layer as a dopant diffusion barrier is investigated. The WSixN layer can be formed by simple WSix surface nitridation using electron cyclotron resonance (ECR) plasma of nitrogen gas without substrate heating. Structural analysis reveals that the WSixN layer is very thin (5.0 to 6.0 nm) and that it remains intact and has an amorphous structure free from grain boundaries even after annealing at 850 degrees C. The WSixN layer formed with ECR nitrogen plasma is found to act as an excellent barrier to dopant diffusion.

引用

页码：3747 / 3751

页数：5

共 9 条

[1] A POLYCIDE GATE ELECTRODE WITH A CONDUCTIVE DIFFUSION BARRIER FORMED WITH ECR NITROGEN PLASMA FOR DUAL-GATE CMOS [J].

HOSOYA, T ;

MACHIDA, K ;

IMAI, K ;

ARAI, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (12) :2111-2116

[2] OHMIC BEHAVIOR OF AU/WSIN/(AU,GE,NI)-NORMAL-GAAS SYSTEMS [J].

MERKEL, U ;

NEBAUER, E ;

MAI, M .

THIN SOLID FILMS, 1992, 217 (1-2) :108-112

[3] TRANSITION-METAL SILICIDES [J].

MURARKA, SP .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1983, 13 :117-137

[4] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[5] DIFFUSION BARRIERS IN THIN-FILMS [J].

NICOLET, MA .

THIN SOLID FILMS, 1978, 52 (03) :415-443

[6] EVALUATION OF AMORPHOUS (MO, TA, W)-SI-N DIFFUSION-BARRIERS FOR [SI]/CU METALLIZATIONS [J].

REID, JS ;

KOLAWA, E ;

RUIZ, RP ;

NICOLET, MA .

THIN SOLID FILMS, 1993, 236 (1-2) :319-324

[7] THERMAL-STABILITY OF WSIN-GAAS AND AU-WSIN INTERFACES [J].

SUGAHARA, H ;

NAGANO, J .

APPLIED SURFACE SCIENCE, 1989, 41-2 :207-211

[8] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON [J].

TSAI, MY ;

DHEURLE, FM ;

PETERSSON, CS ;

JOHNSON, RW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5350-5355

[9]

WEAST RC, 1984, CRC HDB CHEM PHYSICS

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