Red emission from Eu-doped GaN studied by photoluminescence and photo-calorimetric spectroscopy

被引：11

作者：

Maruyama, T ^{[1
]}

Sasaki, H ^{[1
]}

Morishima, S ^{[1
]}

Akimoto, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 11B期

关键词：

GaN; quantum efficiency; photo-calorimetric spectroscopy;

D O I：

10.1143/JJAP.38.L1306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bright and sharp photoluminescence was obtained from Eu-doped GaN films grown by gas-source molecular beam epitaxy using ammonia. It was found that the decrease in luminescence intensity is small between 80 K and 300 K, compared with the red emission from InGaN. The red emission from Eu-doped GaN also showed only a small peak shift within 1.6 meV in the same temperature range. From these results, the advantage of using Eu-doped GaN as a stable optoelectronic material against temperature variation is shown.

引用

页码：L1306 / L1308

页数：3

共 14 条

[1] INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS [J].

BAUR, J ;

MAIER, K ;

KUNZER, M ;

KAUFMANN, U ;

SCHNEIDER, J ;

AMANO, H ;

AKASAKI, I ;

DETCHPROHM, T ;

HIRAMATSU, K .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :857-859

[2] Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering [J].

Behr, D ;

Wagner, J ;

Ramakrishnan, A ;

Obloh, H ;

Bachem, KH .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :241-243

[3] CALORIMETRIC ABSORPTION-SPECTROSCOPY OF NONRADIATIVE RECOMBINATION PROCESSES IN GAP [J].

BIMBERG, D ;

BUBENZER, A .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :803-805

[4] Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates [J].

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 1998, 73 (15) :2143-2145

[5]

DIEKE GH, 1968, SPECTRA ENERGY LEVEL, pCH6

[6] Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy [J].

Doppalapudi, D ;

Basu, SN ;

Ludwig, KF ;

Moustakas, TD .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1389-1395

[7] Identification of the 1.19-eV luminescence in hexagonal GaN [J].

Heitz, R ;

Thurian, P ;

Loa, I ;

Eckey, L ;

Hoffmann, A ;

Broser, I ;

Pressel, K ;

Meyer, BK ;

Mokhov, EN .

PHYSICAL REVIEW B, 1995, 52 (23) :16508-16515

[8] Photoinduced anomalous heat generation in AgCl and AgBr single crystals at liquid-helium temperature [J].

Kondo, Y ;

Goto, I ;

Sakaida, N .

PHYSICAL REVIEW B, 1997, 55 (15) :9534-9543

[9] NEW PHOTOCALORIMETRIC COMPENSATION TECHNIQUE FOR DETERMINING ABSOLUTE FLUORESCENCE QUANTUM EFFICIENCIES OF OPTICALLY-ACTIVE IONS IN LASER MATERIALS [J].

LI, Y ;

DUNCAN, I ;

MORROW, T .

JOURNAL OF LUMINESCENCE, 1991, 50 (02) :69-73

[10] Phase separation in InGaN/GaN multiple quantum wells [J].

McCluskey, MD ;

Romano, LT ;

Krusor, BS ;

Bour, DP ;

Johnson, NM ;

Brennan, S .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1730-1732

← 1 2 →