Reduction of the number of electrons emitted backwards in back-gated devices for field emission: A theoretical study

The use of back-gated geometry (BGG) for field emission devices promises improved robustness, lower power consumption, and simpler manufacturing process. The BGG is a configuration in which the cathode is positioned between anode and gate, different from conventional approaches. Using a cylinder/plane model to represent rows of cathode lines and the back-gate it is demonstrated that this geometry combined with an appropriate effective work-function modulation along the cathode surface can reduce the amount of electrons emitted backwards. (C) 2004 American Institute of Physics.