The influence of deposition temperature on the correlation of Ge quantum dot positions in amorphous silica matrix

被引：33

作者：

Buljan, M. ^{[1
]}

Desnica, U. V. ^{[1
]}

Drazic, G. ^{[2
]}

Ivanda, M. ^{[1
]}

Radic, N. ^{[1
]}

Dubcek, P. ^{[1
]}

Salamon, K. ^{[3
]}

Bernstorff, S. ^{[4
]}

Holy, V. ^{[5
]}

机构：

[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[2] Jozef Stefan Inst, Ljubljana 1000, Slovenia

[3] Inst Phys, Zagreb 10000, Croatia

[4] Sincrotrone Trieste, I-34012 Basovizza, Italy

[5] Charles Univ Prague, Fac Math & Phys, CR-11636 Prague 1, Czech Republic

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 08期

关键词：

GERMANIUM NANOCRYSTALS; SCATTERING; STACKING; GROWTH;

D O I：

10.1088/0957-4484/20/8/085612

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the structural properties of (Ge + SiO2)/SiO2 multilayer films, especially the influence of the deposition temperature and the parameters of subsequent annealing on the formation and spatial correlation of Ge quantum dots in an amorphous silica matrix. We showed that in-layer and inter-layer spatial correlations of the formed Ge quantum dots strongly depend on the deposition temperature. For suitable chosen deposition parameters, highly correlated dot positions in all three dimensions can be obtained. It is demonstrated that the degree of the spatial correlation of quantum dots influences the size distribution width, which further affects the macroscopic properties of the quantum dot arrays.

引用

收藏

页数：6

相关论文

共 26 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].

Alivisatos, AP .

SCIENCE, 1996, 271 (5251) :933-937

[2]

[Anonymous], 2004, HIGH RESOLUTION XRAY, DOI DOI 10.1007/978-1-4757-4050-9

[3] Strong quantum-confinement effects in the conduction band of germanium nanocrystals [J].

Bostedt, C ;

van Buuren, T ;

Willey, TM ;

Franco, N ;

Terminello, LJ ;

Heske, C ;

Möller, T .

APPLIED PHYSICS LETTERS, 2004, 84 (20) :4056-4058

[4] Formation of three-dimensional quantum-dot superlattices in amorphous systems: Experiments and Monte Carlo simulations [J].

Buljan, M. ;

Desnica, U. V. ;

Ivanda, M. ;

Radic, N. ;

Dubcek, P. ;

Drazic, G. ;

Salamon, K. ;

Bernstorff, S. ;

Holy, V. .

PHYSICAL REVIEW B, 2009, 79 (03)

[5] A novel approach of fabricating germanium nanocrystals for nonvolatile memory application [J].

Chang, TC ;

Yan, ST ;

Liu, PT ;

Chen, CW ;

Lin, SH ;

Sze, SM .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (01) :G17-G19

[6] Vibrational coherence of self-organized silver nanocrystals in f.c.c. supra-crystals [J].

Courty, A ;

Mermet, A ;

Albouy, PA ;

Duval, E ;

Pileni, MP .

NATURE MATERIALS, 2005, 4 (05) :395-398

[7] Nonlinear optical response of Ge nanocrystals in a silica matrix [J].

Dowd, A ;

Elliman, RG ;

Samoc, M ;

Luther-Davies, B .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :239-241

[8] Magnetically induced Bragg scattering of electrons in quantum-dot crystals [J].

Elhassan, M ;

Akis, R ;

Bird, JP ;

Ferry, DK ;

Ida, T ;

Ishibashi, K .

PHYSICAL REVIEW B, 2004, 70 (20) :205341-1

[9] Raman scattering of acoustical modes of silicon nanoparticles embedded in silica matrix [J].

Ivanda, M ;

Hohl, A ;

Montagna, M ;

Mariotto, G ;

Ferrari, M ;

Orel, ZC ;

Turkovic, A ;

Furic, K .

JOURNAL OF RAMAN SPECTROSCOPY, 2006, 37 (1-3) :161-165

[10] Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy [J].

Kanjilal, A ;

Hansen, JL ;

Gaiduk, P ;

Larsen, AN ;

Cherkashin, N ;

Claverie, A ;

Normand, P ;

Kapelanakis, E ;

Skarlatos, D ;

Tsoukalas, D .

APPLIED PHYSICS LETTERS, 2003, 82 (08) :1212-1214