A hybrid encapsulation method for organic electronics

被引:69
作者
Kim, N. [1 ,2 ]
Potscavage, W. J., Jr. [1 ,3 ]
Domercq, B. [1 ,3 ]
Kippelen, B. [1 ,3 ]
Graham, S. [1 ,2 ]
机构
[1] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
alumina; atomic layer deposition; fullerenes; organic semiconductors; plasma CVD; silicon compounds; solar cells; thin films; ATOMIC LAYER DEPOSITION; LIGHT-EMITTING DEVICES; BARRIER FILMS; PERMEATION; SILICON; AL2O3;
D O I
10.1063/1.3115144
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a thin-film encapsulation method for organic electronics that combines the deposition of a layer of SiOx or SiNx (100 nm) by plasma enhanced chemical vapor deposition followed by a layer of Al2O3 (10-50 nm) by atomic layer deposition and a 1-mu m-thick layer of parylene by chemical vapor deposition. The effective water vapor transmission rates of the encapsulation was (2 +/- 1)x10(-5) g/m(2) day at 20 degrees C and 50% relative humidity (RH). The encapsulation was integrated with pentacene/C-60 solar cells, which showed no decrease in conversion efficiency after 5800 h of exposure to air demonstrating the effectiveness of the encapsulation methodology.
引用
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页数:3
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