Two temperature sensors with signal-conditioning amplifiers realized in BiCMOS technology

被引：9

作者：

Filanovsky, IM ^{[1
]}

Lee, W ^{[1
]}

机构：

[1] Univ Alberta, Edmonton, AB T6G 2E1, Canada

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1999年 / 77卷 / 01期

关键词：

sensors; temperature; solid-state; threshold extractor; bridge;

D O I：

10.1016/S0924-4247(99)00054-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two temperature sensors realized in BiCMOS technology are described. The first sensor is using, as a temperature sensitive element, an original circuit of threshold extractor. The output of this circuit provides the p-channel transistor threshold voltage that changes with temperature. The second sensor is a resistive bridge using polysilicon and base-diffused resistors that have the temperature coefficients of opposite sign. Both sensors were realized with signal-conditioning amplifiers. The sensors characteristics are given for the temperature range of -40 to 150 degrees C. The threshold voltage is not accurately reproducible, yet the sensors temperature characteristics are linear in the whole temperature range with a slope of 1.8 mV/degrees C that is close to the theoretical one. The characteristics of bridge sensors are tightly reproducible, close to the theoretical ones, but they show essential nonlinearity in the considered temperature range. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：45 / 53

页数：9

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