Photonic band gap airbridge microcavity resonances in GaAs/AlxOy waveguides

被引：17

作者：

Ripin, DJ

Lim, KY

Petrich, GS

Villeneuve, PR

Fan, SH

Thoen, ER

Joannopoulos, JD

Ippen, EP

Kolodziejski, LA

机构：

[1] MIT, Ctr Mat Sci & Engn, Elect Res Labs, Dept Phys, Cambridge, MA 02139 USA

[2] MIT, Ctr Mat Sci & Engn, Elect Res Labs, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 03期

关键词：

D O I：

10.1063/1.372055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photonic band gap waveguide microcavities were designed, fabricated, and measured in a high-dielectric-contrast GaAs/AlxOy III-V compound semiconductor structure. The photonic crystal is defined by a regularly spaced one-dimensional array of holes in the waveguide. By controlling the spacing between the two central holes, the microcavity is formed. The waveguide microcavity is suspended in the airbridge geometry to further increase optical confinement. Resonance states with cavity quality factors as high as 360 were measured at wavelengths near 1.55 mu m, with modal volumes as small as 0.026 mu m(3). (C) 2000 American Institute of Physics. [S0021-8979(00)06203-4].

引用

页码：1578 / 1580

页数：3

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