Electrical and structural properties of RGTO-In2O3 sensors for ozone detection

被引：33

作者：

Faglia, G ^{[1
]}

Allieri, B ^{[1
]}

Comini, E ^{[1
]}

Depero, LE ^{[1
]}

Sangaletti, L ^{[1
]}

Sberveglieri, G ^{[1
]}

机构：

[1] Univ Brescia, NFM, Dept Chem & Phys Mat, I-25133 Brescia, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1999年 / 57卷 / 1-3期

关键词：

ozone sensing; indium compounds; metal oxide gas sensors;

D O I：

10.1016/S0925-4005(99)00079-9

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Bare and An-doped indium oxide thin films have been characterized as ozone sensors. Active layers have been obtained by oxidation of a metallic In thin film through the RGTO technique. Structural characterization showed that only the In2O3 phase is present for oxidation temperatures greater than 250 degrees C. At the: operating temperature of 400 degrees C, response to ozone was greater, stable and reproducible. An introduction as a catalyst increased the overall response and reduced to about 300 degrees C the temperature where ozone/surface reactions are enhanced. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：188 / 191

页数：4