Evolution of structure of the precursor during sol-gel processing of ZnO and low temperature formation of thin films

ZnO thin films were prepared on silicon substrate with Pt electrode by the sol-gel processing using Zn alkoxide solution prepared from Zn(NO3)(2). 6H(2)O and 2-methoxyethanol. FT-IR spectroscopy showed the presence of Zn species in the alkoxide, with methoxyethoxide and nitrato groups as coordination ligands, indicating formation of Zn(NO3)(OCH2CH2OCH3). Smooth and homogeneous thin films were obtained by heat treating coating gel films in the temperature range from 250 to 500 degrees C. The ZnO thin films exhibited a preferred growth of crystals with c-axis perpendicular to the Si substrate surface when fired at 250 degrees C. It was discussed that the presence of nitrogen atoms in precursors had affected the phase development of crystals and was the basis of the structural relaxation for crystallization at low temperature.