Improved crystal quality and harmonic generation in GaSe doped with indium

被引：88

作者：

Suhre, DR ^{[1
]}

Singh, NB ^{[1
]}

Balakrishna, V ^{[1
]}

Fernelius, NC ^{[1
]}

Hopkins, FK ^{[1
]}

机构：

[1] USAF,WRIGHT LAB,MLPO,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

来源：

OPTICS LETTERS | 1997年 / 22卷 / 11期

关键词：

D O I：

10.1364/OL.22.000775

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaSe crystals were doped with indium, and improvements in the mechanical properties and second-harmonic efficiency over pure crystals were obtained. Both effects are due to an improvement in the crystal quality of the material, and it was shown that doping with low levels of indium did not alter the intrinsic value of the nonlinear d coefficient. (C) 1997 Optical Society of America.

引用

页码：775 / 777

页数：3

共 13 条

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