Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment

被引：11

作者：

Chen, Min-Chen ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Huang, Sheng-Yao ^{[1
]}

Chang, Kuan-Chang ^{[3
]}

Huang, Hui-Chun ^{[4
]}

Chen, Shih-Ching ^{[1
]}

Lu, Jin ^{[1
]}

Gan, Der-Shin ^{[4
]}

Ho, New-Jin ^{[4
]}

Young, Tai-Fa ^{[3
]}

Jhang, Geng-Wei ^{[5
]}

Tai, Ya-Hsiang ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Mat Sci & Engn, Kaohsiung 804, Taiwan

[5] Natl Chiao Tung Univ, Dept Display Inst, Hsinchu 300, Taiwan

来源：

SURFACE & COATINGS TECHNOLOGY | 2009年 / 204卷 / 6-7期

关键词：

ZnO; Supercritical fluid; THIN-FILM TRANSISTORS; PULSED-LASER DEPOSITION; ZINC-OXIDE; ELECTRICAL-PROPERTIES; CHANNEL LAYER; HYDROGEN;

D O I：

10.1016/j.surfcoat.2009.09.050

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

in this paper, the supercritical CO2 (SCCO2) fluid technology is successfully applied to improve the electrical characteristics of sputtered ZnO TFTs at low temperature (150 degrees C). After the treatment of SCCO2 fluids mixed with water, the ZnO TFT exhibited superior transfer characteristics and lower threshold voltage. According to X-ray photoelectron spectroscopy (XPS) analyses, the improvements were attributed to the increase of binding energies of Zn-O bonds, hydrogen-related donors and the reduction of traps at the grain boundaries in ZnO thin films. In addition, the crystalline quality and microstructure of ZnO thin films were also investigated by using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The transmittance of the ZnO film was measured by an N&K analyzer 1280 (N&K Technology, Inc.), which is a new type of thin-film measurement system. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1112 / 1115

页数：4

共 23 条

[1] Mobility enhancement in ZnO-based TFTs by H treatment [J].

Bae, HS ;

Kim, JH ;

Im, S .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (11) :G279-G281

[2] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[3] CHARACTERISTICS OF HIGH-QUALITY ZNO THIN-FILMS DEPOSITED BY PULSED-LASER DEPOSITION [J].

CRACIUN, V ;

ELDERS, J ;

GARDENIERS, JGE ;

BOYD, IW .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :2963-2965

[4] The growth of transparent conducting ZnO films by pulsed laser ablation [J].

Henley, SJ ;

Ashfold, MNR ;

Cherns, D .

SURFACE & COATINGS TECHNOLOGY, 2004, 177 :271-276

[5] n-type doping of oxides by hydrogen [J].

Kiliç, Ç ;

Zunger, A .

APPLIED PHYSICS LETTERS, 2002, 81 (01) :73-75

[6] Investigation of optical and electrical properties of ZnO thin films [J].

Lai, Li-Wen ;

Lee, Ching-Ting .

MATERIALS CHEMISTRY AND PHYSICS, 2008, 110 (2-3) :393-396

[7] Characterization of films and interfaces in n-ZnO/p-Si photodiodes [J].

Lee, JY ;

Choi, YS ;

Choi, WH ;

Yeom, HW ;

Yoon, YK ;

Kim, JH ;

Im, S .

THIN SOLID FILMS, 2002, 420 :112-116

[8] The effects of thermal annealing on ZnO thin films grown by pulsed laser deposition [J].

Lu, YF ;

Ni, HQ ;

Mai, ZH ;

Ren, ZM .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (01) :498-502

[9] Lateral interaction of CO and H2 molecules on ZnO surfaces:: an AM1 study [J].

Martins, JBL ;

Taft, CA ;

Lie, SK ;

Longo, E .

JOURNAL OF MOLECULAR STRUCTURE-THEOCHEM, 2000, 528 :161-170

[10] Transparent thin film transistors using ZnO as an active channel layer and their electrical properties [J].

Masuda, S ;

Kitamura, K ;

Okumura, Y ;

Miyatake, S ;

Tabata, H ;

Kawai, T .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1624-1630

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