Magnetoresistance in spin-valve structures with Ni-oxide/Co-oxide bilayer antiferromagnets

被引：4

作者：

Fujikata, J

Hayashi, K

Yamamoto, H

Nakada, M

机构：

[1] Functional Devices Res. Labs., NEC Corporation, Fuchu-city, Tokyo 183

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

关键词：

D O I：

10.1109/20.539098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni-oxide/Co-oxide bilayers are applied to antiferromagnetic layers in spin-valve multilayers. Hysteresis in MR curves is greatly reduced by optimizing the thickness of Co-oxide. An 11% MR ratio and an MR response with small hysteresis are obtained by inserting 3 Angstrom thick Co layer in a NiFe/Cu interface.

引用

收藏

页码：4621 / 4623

页数：3

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