A proposed structure of the nucleus for gas-source epitaxial growth of silicon

被引：15

作者：

Owen, JHG ^{[1
]}

Bowler, DR ^{[1
]}

Goringe, CM ^{[1
]}

Miki, K ^{[1
]}

Briggs, GAD ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND

来源：

SURFACE SCIENCE | 1997年 / 382卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

density functional calculations; growth; nucleation; scanning tunneling microscopy; semi-empirical models and model calculations; silicon; surface structure and morphology;

D O I：

10.1016/S0039-6028(97)00135-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A novel structure has been observed by scanning tunneling microscopy (STM) on the Si(001)) surface after exposure to disilane between 400 and 600 K. The feature is a bright square, with dark lines running across it forming a cross. The proposed structure, a ring of four silicon atoms bonded together and connected by one back-bond per atom to the underlying silicon dimers, has been modelled using tight-binding and density functional theory (DFT) calculations. This ring has been found to be energetically stable with respect to isolated ad-dimers. As it is the first feature to form from disilane fragments with increasing temperature, and its local bonding configuration is very similar to the rebonded B-type step edge which is known to be the favoured adsorption site for epitaxial growth, it may play a crucial role as the nucleus of the new epitaxial layer during: gas-source growth of silicon. (C) 1997 Elsevier Science B.V.

引用

页码：L678 / L685

页数：8

共 17 条

[1] SI BINDING AND NUCLEATION ON SI(100) [J].