Fabrication of refractive microlenses in semiconductors by mask shape transfer in reactive ion etching

被引:36
作者
Strzelecka, EM
Robinson, GD
Coldren, LA
Hu, EL
机构
[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara
[2] W.L. Gore and Associates, Inc., Lompoc
关键词
D O I
10.1016/S0167-9317(96)00206-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Refractive microlenses are formed in semiconductor materials by transfer of a lens-like shape of reflowed erodable polyimide mask into the substrate by reactive ion etching. Simultaneous monitoring of the etch rates of the mask material and the semiconductor results in precise control of the lens radius of curvature. We demonstrate wafer-scale integration of GaAs microlenses with vertical-cavity laser diodes and InP microlenses with InGaAs photodetectors. These integrated components can be used directly in optical systems without additional external optics.
引用
收藏
页码:385 / 388
页数:4
相关论文
共 6 条
[1]   VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH INTEGRATED REFRACTIVE MICROLENSES [J].
BLUM, O ;
KILCOYNE, SP ;
WARREN, ME ;
DU, TC ;
LEAR, KL ;
SCHNEIDER, RP ;
CARSON, RF ;
ROBINSON, G ;
PETERS, FH .
ELECTRONICS LETTERS, 1995, 31 (01) :44-45
[2]   TECHNIQUE FOR MONOLITHIC FABRICATION OF MICROLENS ARRAYS [J].
POPOVIC, ZD ;
SPRAGUE, RA ;
CONNELL, GAN .
APPLIED OPTICS, 1988, 27 (07) :1281-1284
[3]  
SANKUR H, 1996, SPIE, V2383, P179
[4]   MONOLITHIC INTEGRATION OF VERTICAL-CAVITY LASER-DIODES WITH REFRACTIVE GAAS MICROLENSES [J].
STRZELECKA, EM ;
ROBINSON, GD ;
PETERS, MG ;
PETERS, FH ;
COLDREN, LA .
ELECTRONICS LETTERS, 1995, 31 (09) :724-725
[5]  
STRZELECKA EM, 1996, SPIE, V2691, P43
[6]   Reduced optical scattering loss in vertical-cavity lasers using a thin (300 angstrom) oxide aperture [J].
Thibeault, BJ ;
Hegblom, ER ;
Floyd, PD ;
Naone, R ;
Akulova, Y ;
Coldren, LA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (05) :593-595