A new method to extract diode parameters under the presence of parasitic series and shunt resistance

被引：28

作者：

Ranuárez, JC ^{[1
]}

Ortiz-Conde, A ^{[1
]}

Sánchez, FJG ^{[1
]}

机构：

[1] Univ Simon Bolivar, Dept Elect, Caracas 1080A, Venezuela

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 02期

关键词：

Electric currents - Electric resistance - Failure analysis - Optimization;

D O I：

10.1016/S0026-2714(99)00232-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple method is presented for extracting the diode ideality factor and saturation current in the presence of significant series and parallel parasitic resistances. Additionally, the values of both resistances can be determined. The method is compared to conventional direct optimization, which fails when both resistances are simultaneously significant. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：355 / 358

页数：4

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[No title captured]

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