A novel method of removing impurities from multilevel interconnect materials

被引：2

作者：

Fukuda, T ^{[1
]}

Shishiguchi, S ^{[1
]}

Yanazawa, H ^{[1
]}

机构：

[1] ASET, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014938

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method of removing impurities from dielectric films has been developed. The removal process employs CO2 supercritical fluid (SCF), or CO2 SCE along with a wet pretreatment. The CO2 SCF removes H2O from the film. Charges in the films are removed effectively by humidification and successive charge extraction with CO2 SCF. Films treated by this method reveal their intrinsic properties, which are masked by impurities, and this method restores the properties of an interlayer dielectric (ILD), even after interconnect formation.

引用

页码：217 / 219

页数：3