Nanotip processing on TiO2 surfaces irradiated with fullerenes in the electronic regime

被引:5
作者
Canut, B [1 ]
Thevenard, P [1 ]
Jardin, C [1 ]
机构
[1] Univ Lyon 1, CNRS, UMR 5586, Dept Phys Mat,Lab Phys Mat Condensee & Nanostruct, F-69622 Villeurbanne, France
关键词
D O I
10.1016/j.nimb.2003.12.076
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
TiO2 single crystals, overlaid with a thin layer (5 nm) of Pt, were irradiated with C-60 clusters produced by the 15 MV tandem accelerator of the "Institut de Physique Nucleaire d'Orsay". The incident projectile energy was either 30 or 40 MeV, which corresponds to a slowing-down mainly governed by inelastic processes (electronic energy loss of 30 MeV C60 clusters in TiO2:61.1 keV nm(-1)). All the irradiations were performed at room temperature with fluences up to 10(11) clusters/cm(-2). Each cluster impact induces a surface modification leading to a surface nanoprotrusion. From atomic force microscopy (AFM) measurements, the surface nanotips have a mean height of 12 nm and a mean basal diameter of 34 nm for 30 MeV cluster irradiations. Rutherford backscattering spectrometry in channeling geometry (RBS-C) evidences the track damage created in TiO2 by the high electronic energy losses. Additional RBS analyses performed at grazing detection angle show that the roughness of the metallic film increases after irradiation. Both AFM and RBS results allow to conclude that the top part of the radiation-induced nanotips consists of TiO2 which has bursted the 5 nm platinum layer. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:487 / 491
页数:5
相关论文
共 17 条
[1]   SURFACE-ROUGHNESS USING RUTHERFORD BACKSCATTERING [J].
BILL, U ;
EDGE, RD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) :1812-1814
[2]   The concept of effective electronic stopping power for modelling the damage cross-section in refractory oxides irradiated by GeV ions or MeV clusters [J].
Canut, B ;
Ramos, SMM .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1998, 145 (1-2) :1-27
[3]  
CHU WK, 1978, BACKSCATTERING SPECT, P61
[4]  
FLEISHER RL, 1979, NUCL TRACKS SOLIDS
[5]   ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].
GIBBONS, JF .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09) :1062-&
[6]   PLURAL AND MULTIPLE SCATTERING OF LOW-ENERGY HEAVY PARTICLES IN SOLIDS [J].
MEYER, L .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 44 (01) :253-&
[7]  
MORGAN DV, 1973, CHANNELING, P415
[8]   Damage creation in α-Al2O3 by MeV fullerene impacts [J].
Ramos, SMM ;
Bonardi, N ;
Canut, B ;
Bouffard, S ;
Della-Negra, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 143 (03) :319-332
[9]   Wetting on nanorough surfaces [J].
Ramos, SMM ;
Charlaix, E ;
Benyagoub, A ;
Toulemonde, M .
PHYSICAL REVIEW E, 2003, 67 (03) :6
[10]   Direct observation of latent nuclear tracks in organic material by atomic force microscopy [J].
Rozlosnik, N ;
Bohus, LS ;
Birattari, C ;
Gadioli, E ;
Biro, LP ;
Havancsak, K .
NANOTECHNOLOGY, 1997, 8 (01) :32-34