Photonic band gap material for integrated photonic application:: technological challenges

被引：20

作者：

François, M ^{[1
]}

Danglot, J ^{[1
]}

Grimbert, B ^{[1
]}

Mounaix, P ^{[1
]}

Muller, M ^{[1
]}

Vanbésien, O ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, Inst Electron & Microelectron Nord, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 61-2卷

关键词：

photonic band gap; deep reactive ion etching; electron beam lithography; microphotonics;

D O I：

10.1016/S0167-9317(02)00526-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of two-dimensional photonic crystals (PCs), aimed at operating in compact photonic systems, for optical communications. The targeted device is an optical add drop multiplexer (OADM) whose operation relies on the wavelength-selective and directional coupling of two optical waveguides. The microstructures are fabricated in an InP-based technology by means of a high resolution electron beam patterning generator (HR-EPBG), silicon nitride mask transfer and deep reactive ion etching (DRIE). Successful fabrication of arrays of holes with nano-scale dimensions is demonstrated with aspect ratios of the order of seven for devices operating in the long wavelength windows. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：537 / 544

页数：8

共 8 条

[1] Near-infrared Yablonovite-like photonic crystals by focused-ion-beam etching of macroporous silicon [J].