Carrier separation analysis for clarifying leakage mechanism in unstressed and stressed HfAlOx/SiO2 stack dielectric layers

被引：11

作者：

Mizubayashi, W ^{[1
]}

Yasuda, N ^{[1
]}

Ota, H ^{[1
]}

Hisamatsu, H ^{[1
]}

Tominaga, K ^{[1
]}

Iwamoto, K ^{[1
]}

机构：

[1] MIRAI ASRC, Tsukuba, Ibaraki 3058569, Japan

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315322

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The carrier type involved in the leakage current through HfAlOX/SiO2 dielectric layers has been investigated for unstressed and stressed MOSFETs, using the carrier separation method. It is found that the hole current dominates the leakage current in the unstressed HfAlOX/SiO2. The dominant carrier in stress-induced leakage current (SILC) is hole, while the electron current is predominant after the soft breakdown (SBD) of the dielectric film. For the SILC condition, the trap generation in the high-k stack occurs both near the conduction band edge of n(+)poly-Si and the valence band edge of Si substrate. The defect sites generated in the high-k stack after SBD are located at energies near the conduction band edge of n+poly-Si.

引用

页码：188 / 193

页数：6

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