Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications

被引：17

作者：

Brady, FT

Hughes, HL

McMarr, PJ

Mrstik, B

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] SFA INC,LANDOVER,MD 20785

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/23.556848

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A total dose hardening treatment is applied to SIMOX buried oxides, Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from -0.7 to -0.2 V for FETs built on the hardened wafers.

引用

页码：2646 / 2650

页数：5

共 6 条

[1]

BRADY F, 1992, 1992 IEEE INT SOI C, P88

[2] FULLY-DEPLETED SUBMICRON SOI FOR RADIATION-HARDENED APPLICATIONS [J].