Opportunities and technical strategies for silicon carbide device development

被引：33

作者：

Cooper, JA ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

bipolar transistors; BJTs; GTOs; IMPATT diode oscillators; JFETs; MESFETs; microwave devices; MOS mobility; MOSIFETs; PiN diodes; power switching devices; Schottky diodes; SiC; SITs; static induction transistors; thyristors;

D O I：

10.4028/www.scientific.net/MSF.389-393.15

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The number of people working on SiC worldwide is small compared to the number working on silicon or GaAs, so our development efforts need to be carefully focused. We need to concentrate on devices that have the greatest likelihood of penetrating the existing market or creating new markets, particularly those that take advantage of the unique properties of SiC to achieve performance not available in silicon.

引用

页码：15 / 20

页数：6

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