Fabrication of field emitter arrays with hydrogenated amorphous silicon on glass

被引：3

作者：

Gamo, H ^{[1
]}

Kanemaru, S ^{[1
]}

Itoh, J ^{[1
]}

机构：

[1] TOPPAN PRINTING CO LTD,ELECT RES LAB,SUGITO,SAITAMA 345,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12B期

关键词：

hydrogenated amorphous silicon; amorphous silicon; field emitter array; plasma enhanced chemical vapor deposition; vacuum microelectronics; field emission display;

D O I：

10.1143/JJAP.35.6620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An n-type hydrogenated amorphous silicon (n(+)-a-Si:H) field emitter array (FEA) was fabricated on a glass substrate and characterized. The n(+)-a-Si:H film was deposited by a conventional plasma-enhanced-chemical-vapor-deposition (PECVD) technique using a silane and phosphine mixed gas at a temperature lower than 350 degrees C, The present film showed a low resistivity of 50 Ohm . cm. The FEA consists of 1-mu m-high emitter tips and a gate electrode with 1.8-mu m-diameter openings. Using the fabricated FEA (25-tips), an emission current of 11 mu A was obtained at a gate voltage of 100 V.

引用

页码：6620 / 6622

页数：3

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